A High-voltage Serial-in-parallel-out Shift Register with Amorphous Silicon TFTs

In this paper, we proposed a high-voltage serial-in-parallel-out (SIPO) shift register based on amorphous silicon thin-film transistors (a-Si TFTs). We provided detailed introduction of the bootstrap inverter, key component register, and presented simulation analysis one-stage five-stage SIPO registers, respectively. Then fabricated registers employing a-Si TFTs. Both results experimental show that is capable transmitting 50 V high voltage pulse signal with clock frequency 20 kHz expected to be an important building block for applications digital microfluidics.